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Photonics

Technical Information: Compound Semiconductors

Compound Semiconductors |
Semiconductor Materials and Process Science and Technology |
Solid-State Physics and Device Research | Microelectronic and Optoelectronic Integrated Circuits

 

Semiconductors are the foundation of today's information age. They enable and underlie virtually every system involved in the manipulation and movement of information, from laptop computers to satellite-based global communications networks. Moreover, as the manipulation and movement of information rapidly becomes as vital to world economic growth as were once the generation and movement of food (the agricultural age) and the development and powering of machine tools (the industrial age), so semiconductor materials are becoming as (or more) vital to world economic growth as were once other materials such as stone and wood, metals and coal.

This page describes some of the unique characteristics of semiconductors that have led to their importance to the information age, with a particular focus on compound semiconductors.

Characteristics of Semiconductor Materials
A primary characteristic, from which they derive their name, is that they are "lukewarm" electrical conductors. Neither highly insulating nor highly conducting, they were not initially believed to be particularly useful. However, because their conductivity is not only lukewarm, but also extremely sensitive to the introduction of impurities and the application of electric fields, they can easily be precision engineered into the basic building blocks of microelectronics: current or voltage controlled switches and amplifiers.

A secondary (but also crucial) characteristic is that their electrical conductivity is based on two "effective" carrier types, negatively charged electrons and positively charged holes. The interaction between these carrier types is very strong, and in many cases is either caused by the absorption, or results in the emission, of light (photons). Then, by precision engineering of the interaction between electrons and holes in compact devices, they can be used to form the basic building blocks of photonics: light absorbing and emitting devices such as detectors, lasers and light-emitting diodes (LEDs).

Families of Semiconductor Materials
The dominant semiconductors are inorganic, and can be divided into three major families, according to whether they are composed of elements from column IV, compounds between elements in columns III and V, or compounds between elements in columns II and VI of the periodic table. Although they all have the two unique characteristics described above, all their other physical and chemical properties vary widely both from family to family as well as within each family. For example, at one extreme C in its diamond form has a very small lattice constant, is transparent into the ultraviolet, and is mechanically hard with a high thermal conductivity. At the other extreme, HgCdTe has a very large lattice constant, is transparent
only in the far infrared, and is mechanically soft with a low thermal conductivity.

CSRL
Sandia's Center for CSRL focuses on compounds derived from the column III-V family of elements. These compounds are permutations of the column III elements Al, Ga and In and the column V elements N, P, As and Sb. They are characterized by their excellent optoelectronic (efficient light emission and absorption) and electronic (high carrier mobilities) properties.

The optoelectronics applications (e.g., optical communications, displays, sensors) of the various families of III-V materials are determined in large part by the wavelength ranges within which they emit and absorb light efficiently:

  • GaAs-related materials: 0.8-1.0 µm
  • InP-related aterials: 1.3-1.7 µm
  • GaN-related materials: 0.3-0.6 µm
  • InSb-related materials: 2-10 µm
  • GaP-related materials: 0.5-0.7 µm

The electronic applications (e.g., wireless communications based on high-frequency RF or microwave carriers, radars, and magnetic-field sensors) of the various families of III-V materials are determined by trade-offs between performance and material robustness during device manufacture and operation. In practice, GaAs-related materials are the most common, but InP-related materials and InSb-related materials also have important applications.

One particularly useful aspect of III-V materials is their richness and variety, as illustrated by this band-gap versus lattice constant "road-map" to III-V materials. This richness enables high-performance "band-gap engineered" heterostructures and devices with optical and electronic properties difficult to achieve in other materials.

Please address comments or questions to mstcinfo@sandia.gov.