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The CRSL has a wide range of research and development programs in
semiconductor materials and process science and technology. These programs are
aimed at developing the science base underlying advanced materials and
proceses, and include:
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Materials synthesis and processing mechanisms and
modeling
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In-situ monitoring and control
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Novel materials, heterostructures and
processes
Materials synthesis and processing mechanisms and modeling
The two main materials synthesis technologies are molecular beam epitaxy (MBE)
and metal-organic vapor phase epitaxy (MOVPE). Both techniques involve a
complex interplay between tool performance and surface and thin film growth
mechanisms. The CSRL has a number of programs aimed at understanding and modeling
the epitaxial growth process. For example, our chemical vapor deposition (CVD)
sciences programs are elucidating the complex interaction between CVD process
chemistry and the fluid dynamics of a CVD reactor. An example is the gas flow
pattern in the rotating disk MOVPE reactor shown below, which reveals the
streamlined behavior of reactive gases under ideal flow conditions.
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